| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-346-3 |
| Polarity | PNP |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 0.15A |
| hFE Min | 70 |
| hFE Max | 400 |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.5 mm |
| Size-Height | 1.1 mm |
Audio Frequency General Purpose Amplifier Applications
●• High voltage and high current: VCEO= −50 V, IC= −150 mA (max)
●• Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA)
● = 0.95 (typ.)
●• High hFE: hFE= 70~400
●• Low noise: NF = 1dB (typ.), 10dB (max)
●• Complementary to 2SC2712
●• Small package
Toshiba
3 Pages / 0.37 MByte
Toshiba
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
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