TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 30 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-264-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 150 W |
Breakdown Voltage (Collector to Emitter) | 250 V |
Continuous Collector Current | 17A |
hFE Min | 80 @1A, 5V |
Input Power (Max) | 150 W |
DC Current Gain (hFE) | 80 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -50 ℃ |
Power Dissipation (Max) | 150 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 20 mm |
Size-Width | 5 mm |
Size-Height | 26 mm |
Operating Temperature | -50℃ ~ 150℃ (TJ) |
The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation.
● High voltage
● High frequency
● Complement to 2SC5200/FJL4315
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