| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -230 V |
| Current Rating | -15.0 A |
| Case/Package | TO-3-3 |
| Polarity | PNP |
| Power Dissipation | 130000 mW |
| Gain Bandwidth Product | 30 MHz |
| Breakdown Voltage (Collector to Emitter) | 230 V |
| Continuous Collector Current | 15A |
| hFE Min | 80 |
| Input Power (Max) | 130 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
| Size-Length | 15.9 mm |
| Size-Width | 4.8 mm |
| Size-Height | 19 mm |
Toshiba
4 Pages / 0.12 MByte
Toshiba
4 Pages / 0.3 MByte
ON Semiconductor
PNP Epitaxial Silicon Transistor
Fairchild
Trans GP BJT PNP 250V 17A 130000mW 3Pin(3+Tab) TO-3P Rail
ON Semiconductor
Trans GP BJT PNP 250V 17A 3Pin(3+Tab) TO-3P Tube
ON Semiconductor
Trans GP BJT PNP 250V 17A 3Pin(3+Tab) TO-3P Tube
Fairchild
Trans GP BJT PNP 250V 17A 130000mW 3Pin(3+Tab) TO-3P Rail
Toshiba
Power Amplifier Applications
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