| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Polarity | PNP |
| Power Dissipation | 130000 mW |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 17A |
| hFE Min | 55 @1A, 5V |
| Input Power (Max) | 130 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 130000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 15.6 mm |
| Size-Width | 4.8 mm |
| Size-Height | 19.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 250V 17A 30MHz 130W Through Hole TO-3P
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