| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 230 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-220F-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 25 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 10A |
| hFE Min | 150 |
| hFE Max | 450 |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 150 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
2SA2222SG is Bipolar Transistor, -50V, -10A, Low VCE(sat), PNP TO-220F-3FS for High-Current Switching Applications.
●Features
●---
● |
● Adoption of MBIT process
● Large current capacity (IC=-10A)
● Low collector-to-emitter saturation voltage (VCE(sat)=-250mV(typ))
● High-speed switching (tf=22ns(typ))
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