TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-92-3 |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 50 MHz |
Breakdown Voltage (Collector to Emitter) | 50 V |
hFE Min | 90 |
hFE Max | 600 |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
GENERAL PURPOSE SMALL SIGNAL TRANSISTORS
●(CONT.)
Fairchild
7 Pages / 0.23 MByte
Fairchild
5 Pages / 0.12 MByte
UTC
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
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