TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -32.0 V |
Current Rating | -2.00 A |
Case/Package | TO-252-3 |
Power Rating | 10 W |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 1 W |
Breakdown Voltage (Collector to Emitter) | 32 V |
Continuous Collector Current | 2A |
hFE Min | 120 @500mA, 3V |
hFE Max | 390 |
Input Power (Max) | 10 W |
DC Current Gain (hFE) | 82 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 10000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 5.5 mm |
Size-Height | 2.3 mm |
Operating Temperature | 150℃ (TJ) |
PNP Silicon epitaxial planar transistor Medium power Transistor Features 1) Low VCE(sat). 2) Complements the 2SD1758
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Transistors > Medium Power Bipolar Transistors(0.5W(1/2W)-1W)
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MEDIUM POWER LOW VOLTAGE TRANSISTOR
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