TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 150 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 4 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 0.8 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 2A |
hFE Min | 100 @100mA, 2V |
hFE Max | 280 |
Input Power (Max) | 800 mW |
DC Current Gain (hFE) | 140 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.5 mm |
Size-Width | 5.5 mm |
Size-Height | 2.3 mm |
Operating Temperature | 150℃ (TJ) |
2SB1201 is a Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Application.
●Features
●---
● |
● Adoption of FBET, MBIT processes
● Large current capacitance and wide ASO
● Low collector-to-emitter saturation voltage
● Fast switching speed
● Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller
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