| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 4 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 0.8 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 2A |
| hFE Min | 100 @100mA, 2V |
| hFE Max | 280 |
| Input Power (Max) | 800 mW |
| DC Current Gain (hFE) | 140 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.5 mm |
| Size-Width | 5.5 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | 150℃ (TJ) |
2SB1201 is a Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Application.
●Features
●---
● |
● Adoption of FBET, MBIT processes
● Large current capacitance and wide ASO
● Low collector-to-emitter saturation voltage
● Fast switching speed
● Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller
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