| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-89 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 2A |
PNP Silicon epitaxial planar transistor Power transistor Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD1980
ROHM Semiconductor
1 Pages / 0.06 MByte
ROHM Semiconductor
CPT3/TO-252(DPAK) PNP -100V -2A
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