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2SB1386T100Q
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2SB1386T100Q Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:BJTs
Case Package:TO-243
Description:MPT PNP 20V 5A
Documentation:2SB1386T100Q Datasheet (5 Pages)Package Outline Dimension on1 Page
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2SB1386T100Q Datasheet PDF (5 Pages)
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2SB1386T100Q Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Voltage Rating (DC)-20.0 V
Current Rating-5.00 A
Case/PackageTO-243
Number of Positions3 Position
PolarityPNP
Power Dissipation500 mW
Gain Bandwidth Product120 MHz
Breakdown Voltage (Collector to Emitter)20 V
Continuous Collector Current5A
hFE Min120 @500mA, 2V
hFE Max390
Input Power (Max)2 W
DC Current Gain (hFE)82
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)2000 mW
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2SB1386T100Q Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTape & Reel (TR)
Size-Length4.5 mm
Size-Width2.5 mm
Size-Height1.5 mm
Operating Temperature150℃ (TJ)
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2SB1386T100Q Documents

2SB1386T100Q Datasheet
ROHM Semiconductor
5 Pages / 0.1 MByte
2SB1386T100Q Other Datasheet PDF
ROHM Semiconductor
2 Pages / 0.15 MByte
2SB1386T100Q Other References
ROHM Semiconductor
1 Pages / 0.12 MByte

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