| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 130 W |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| hFE Min | 50 @5A, 4V |
| Input Power (Max) | 130 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 130 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | 150℃ (TJ) |
The 2SC3519 is a silicon NPN epitaxial Planar Transistor for general purpose applications. LAPT (Large Area Parallel Transistor) line which use multiple thermally-coupled transistors in parallel. The result is composite transistors that maintain their excellent linear gain characteristics even at full output current and provide extended frequency response, typically to 40MHz. Best of all, however, is their extraordinary resistance to secondary breakdown. No other audio transistor can match Sanken for power handling at over 100V.
● Complement to 2SA1386/A
Sanken Electric
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