| TYPE | DESCRIPTION |
|---|
| Case/Package | PW-MOLD |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 20 V |
| Continuous Collector Current | 5A |
Features •TOSHIBA Transistor Silicon NPN Epitaxial Type •Strobe Flash Applications Medium Power Amplifier Applications •High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) •Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) •High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Toshiba
2 Pages / 0.14 MByte
Toshiba
2 Pages / 0.14 MByte
Toshiba
4 Pages / 0.15 MByte
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