TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 3500 MHz |
Number of Pins | 4 Pin |
Case/Package | TO-243 |
Polarity | NPN |
Power Dissipation | 1.3 W |
Breakdown Voltage (Collector to Emitter) | 30 V |
Continuous Collector Current | 0.3A |
hFE Min | 90 @50mA, 5V |
Input Power (Max) | 1.3 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2SC5551AE-TD-E GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 2 V. Its maximum power dissipation is 1300 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 2 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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