| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 400 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-243 |
| Number of Positions | 3 Position |
| Polarity | N-Channel, NPN |
| Power Dissipation | 1.3 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 4A |
| hFE Min | 200 @500mA, 2V |
| hFE Max | 560 |
| Input Power (Max) | 1.3 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.5 mm |
| Size-Width | 2.5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | 150℃ (TJ) |
Implement this NPN 2SC5566-TD-E GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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