| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-523 |
| Power Dissipation | 115 mW |
| Breakdown Voltage (Collector to Emitter) | 3.3 V |
| Gain | 14 dB |
| hFE Min | 60 @5mA, 2V |
| Input Power (Max) | 115 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 115 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Height | 0.75 mm |
| Operating Temperature | 150℃ (TJ) |
RF Transistor NPN 3.3V 35mA 21GHz 115mW Surface Mount SOT-523
California Eastern Laboratories
7 Pages / 0.49 MByte
NEC
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3Pin ULTRA SUPER MINIMOLD (19, 1608 PKG)
California Eastern Laboratories
Trans RF BJT NPN 3.3V 0.035A 115mW 3Pin Ultra Super Mini-Mold T/R
NEC
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3Pin ULTRA SUPER MINIMOLD (19, 1608 PKG)
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