| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252 |
Power transistor Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. !Applications Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor
ROHM Semiconductor
4 Pages / 0.04 MByte
ROHM Semiconductor
Trans GP BJT NPN 60V 3A 2000mW 4Pin(3+Tab) MPT T/R
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