TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 60 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-723-3 |
Power Dissipation | 0.15 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
hFE Min | 200 @2mA, 6V |
hFE Max | 400 |
Input Power (Max) | 150 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Width | 0.8 mm |
Operating Temperature | 150℃ (TJ) |
● High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
● Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
● High hFE : hFE = 120 to 400
● Complementary to 2SA2154MFV
Toshiba
4 Pages / 0.15 MByte
Toshiba
Trans GP BJT NPN 50V 0.15A 3Pin VESM Embossed T/R
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