TYPE | DESCRIPTION |
---|
Case/Package | SOT-723 |
Polarity | NPN |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 0.15A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Transistor Silicon NPN Epitaxial Type General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400
Toshiba
2 Pages / 0.05 MByte
Toshiba
4 Pages / 0.24 MByte
Toshiba
Trans GP BJT NPN 50V 0.15A 3Pin VESM Embossed T/R
Toshiba
Bipolar Transistors - BJT 100mA 50V
Toshiba
Bipolar Transistors - BJT 100mA 50V
Toshiba
GENERAL-PURPOSE AMPLIFIER
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.