| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Polarity | N-Channel, NPN |
| Power Dissipation | 0.75 W |
| Gain Bandwidth Product | 150 MHz |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 100 @100mA, 2V |
| hFE Max | 560 |
| Input Power (Max) | 750 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Height | 5 mm |
| Operating Temperature | 150℃ (TJ) |
Features
●• Adoption of FBET, MBIT processes
●• Large current capacity
●• Low collector-to-emitter saturation voltage
●• Fast switching time
●Applications
●• Voltage regulators, relay drivers, lamp drivers, electrical equipment
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