| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 25 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 25 W |
| Gain Bandwidth Product | 3 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @500mA, 5V |
| hFE Max | 320 |
| Input Power (Max) | 25 W |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 25000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.9 mm |
| Size-Height | 9.39 mm |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications.
●■ HIGH DC CURRENT GAIN
●■ LOW SATURATION VOLTAGE
●■ INSULATED PACKAGE FOR EASY MOUNTING
●APPLICATIONS
●■ GENERAL PURPOSE POWER AMPLIFIERS
●■ GENERAL PURPOSE SWITCHING
ST Microelectronics
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ST Microelectronics
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