| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 90 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 3.00 A |
| Case/Package | TO-126-3 |
| Power Rating | 12.5 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 12.5 W |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| hFE Min | 100 @100mA, 2V |
| Input Power (Max) | 12.5 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 12500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 7.8 mm |
| Size-Width | 2.7 mm |
| Size-Height | 10.8 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The 2SD882 is a 30V NPN medium power Transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. It is ideal for voltage regulation, relay driver, generic switch, audio power amplifier and DC-DC converter applications.
● High current
● Low saturation voltage
● 6A Peak collector current
● 60V Collector to base voltage
● 1A Base current
● 10°C/W Thermal resistance, junction to case
ST Microelectronics
8 Pages / 0.1 MByte
ST Microelectronics
2 Pages / 0.16 MByte
ST Microelectronics
2 Pages / 0.16 MByte
ST Microelectronics
1 Pages / 0.16 MByte
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