2SJ439 Datasheet PDF - Toshiba

2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −16 V) Enhancement−mode : Vth = −0.5~−1.1 V (VDS = −10 V, ID = −1 mA)