TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Dissipation | 100 mW |
Reverse Breakdown Voltage | 50 V |
Input Capacitance (Ciss) | 8.2pF @10V(Vds) |
Input Power (Max) | 100 mW |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | 125℃ (TJ) |
Due to the very high input electrical resistance, there will be very little voltage-drop in your circuit if you use the 2SK208-GR(TE85L,F) JFET transistor from Toshiba. Its maximum power dissipation is 100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C.
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