| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-23 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
General Purpose and Impedance Converter and
●Condenser Microphone Applications
●• High breakdown voltage: VGDS = −50 V
●• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
●• Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
●• Small package.
Toshiba
4 Pages / 0.28 MByte
Toshiba
4 Pages / 0.2 MByte
Toshiba
Trans JFET N-CH Si 3Pin S-Mini
Toshiba
JFET Junction FET N-Ch 0.3 to 6.5mA 10mA
Toshiba
JFET N-Ch SM Sig FET -50V NF 0.5dB -1nA -30V
Toshiba
Transistor JFET N-Ch 50V 0.75mA S-Mini3
Toshiba
JFET N-Ch Junction FET 10mA -50V VGDS
Toshiba
Silicon N Channel Junction Type Field Effect Transistor
Toshiba
Trans JFET N-CH 6.5mA Si 3Pin S-Mini T/R
Toshiba
Silicon N Channel Junction Type Field Effect Transistor
Toshiba
Silicon N Channel Junction Type Field Effect Transistor
Toshiba
Silicon N Channel Junction Type Field Effect Transistor
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