| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 20W (Tc) |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 20.0 ns |
| Input Capacitance (Ciss) | 400pF @10V(Vds) |
| Input Power (Max) | 10 W |
| Power Dissipation (Max) | 20W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tape & Reel (TR) |
| Size-Width | 5.5 mm |
| Operating Temperature | 150℃ (TJ) |
Structure
●Silicon N-channel MOS FET
●Features
●1) Low On-resistance.
●2) Fast switching speed.
●3) Wide SOA (safe operating area).
●4) 4V drive.
●5) Drive circuits can be simple.
●6) Parallel use is easy.
●Applications
●Switching
ROHM Semiconductor
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ROHM Semiconductor
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ROHM Semiconductor
Transistors > MOS FET > Power MOS FETA
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