| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Power Dissipation | 30W (Tc) |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 80.0 ns |
| Input Capacitance (Ciss) | 1600pF @10V(Vds) |
| Input Power (Max) | 30 W |
| Power Dissipation (Max) | 30W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | 150℃ (TJ) |
Structure
●Silicon N-channel MOSFET
●Features
●1) Low on-resistance.
●2) Fast switching speed.
●3) Wide SOA (safe operating area).
●4) Easily designed drive circuits.
●5) Low VGS(th).
●6) Easy to parallel.
ROHM Semiconductor
5 Pages / 0.13 MByte
ROHM Semiconductor
5 Pages / 0.13 MByte
ROHM Semiconductor
MOSFET N-CH 60V 10A TO-220FN
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