| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 1 kHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Dissipation | 150 mW |
| Test Current | 500 µA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Discontinued at Digi-Key |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 125℃ |
This 2SK209-BL(TE85L,F) JFET transistor from Toshiba is an uni-polar voltage-controlled device that has a very high input electrical resistance. Its maximum power dissipation is 150 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This junction field effect transistor has an operating temperature range of -55 °C to 125 °C.
Toshiba
4 Pages / 0.27 MByte
Toshiba
4 Pages / 0.27 MByte
Toshiba
JFET N-Ch 10mA -50V FET 150mW Audio LNA
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