TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 100 mA |
Case/Package | SOT-323 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 8 Ω |
Polarity | N-Channel |
Power Dissipation | 200 mW |
Threshold Voltage | 1.5 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Continuous Drain Current (Ids) | 100 mA |
Rise Time | 35 ns |
Input Capacitance (Ciss) | 13pF @5V(Vds) |
Input Power (Max) | 200 mW |
Fall Time | 80 ns |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 200mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not For New Designs |
Packaging | Tape & Reel (TR) |
Operating Temperature | 150℃ (TJ) |
The 2SK3018T106 is a N-channel silicon MOSFET offers 30V drain source voltage and ±100mA continuous drain current. It is suitable for use in interfacing, switching applications.
● Low ON-resistance
● Fast switching speed
● 2.5V Low voltage drive makes this device ideal for portable equipment
● Drive circuits can be simple
● Parallel use is easy
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