| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | PW-MINI |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -45 ℃ |
| Power Dissipation (Max) | 3000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
VHF/UHF Band Amplifier Applications
●The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
●• Output power: Po ≥28.0dBmW
●• Gain: Gp ≥8.0dB
●• Drain Efficiency: ηD ≥50%
Toshiba
5 Pages / 0.12 MByte
Toshiba
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-5K1D, SC-62, 3Pin, FET RF Small Signal
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Trans MOSFET N-CH 10V 0.5A 3Pin SC-62
Toshiba
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-5K1D, SC-62, 3Pin, FET RF Small Signal
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