| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 900 V |
| Current Rating | 3.00 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 4.3 Ω |
| Polarity | N-CH |
| Power Dissipation | 400 W |
| Drain to Source Voltage (Vds) | 900 V |
| Breakdown Voltage (Drain to Source) | 900 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 700pF @25V(Vds) |
| Input Power (Max) | 40 W |
| Fall Time | 34 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
| Size-Length | 10 mm |
| Size-Width | 4.5 mm |
| Size-Height | 15 mm |
Toshiba
6 Pages / 0.21 MByte
Toshiba
3 Pages / 0.09 MByte
Toshiba
Trans MOSFET N-CH 900V 3A 3Pin(3+Tab) TO-220SIS
Toshiba
Trans MOSFET N-CH 900V 3A 3Pin(3+Tab) TO-220SIS
Toshiba
Trans MOSFET N-CH 900V 3A 3Pin(3+Tab) TO-220SIS
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