TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 130 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-89-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 1.4 W |
Gain Bandwidth Product | 130 MHz |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 3A |
hFE Min | 160 @1A, 2V |
Input Power (Max) | 1.4 W |
DC Current Gain (hFE) | 160 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1.4 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.6 mm |
Size-Width | 2.6 mm |
Size-Height | 1.6 mm |
Operating Temperature | 150℃ (TJ) |
The 2STF2360 is a PNP fast-switching Power Transistor manufactured using new "PB-HDC" (power bipolar high density current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
● Very low collector-emitter saturation voltage
● High current gain characteristic
● Fast-switching speed
ST Microelectronics
11 Pages / 0.18 MByte
ST Microelectronics
1 Pages / 0.14 MByte
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