| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 1600 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 5A |
| hFE Min | 135 @2A, 2V |
| hFE Max | 100 @3A, 2V |
| Input Power (Max) | 1.6 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | 150℃ (TJ) |
The versatility of this NPN 2STN1550 GP BJT from STMicroelectronics makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
ST Microelectronics
8 Pages / 0.13 MByte
ST Microelectronics
9 Pages / 0.12 MByte
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