| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Polarity | NPN |
| Power Dissipation | 130 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 25A |
| hFE Min | 500 @10A, 3V |
| Input Power (Max) | 130 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 130000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
Do you have a circuit where a higher current gain is required? STMicroelectronics" NPN 2STW100 Darlington transistor can help! This product"s maximum continuous DC collector current is 25 A, while its minimum DC current gain is 300@20A@3 V|500@10A@3V|600@5A@3V. It has a maximum collector emitter saturation voltage of 1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V. This Darlington transistor array"s maximum base emitter saturation voltage is 3.3@80mA@20A V. Its maximum power dissipation is 130000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V.
ST Microelectronics
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ST Microelectronics
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