| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | TO-205 |
| Forward Voltage | 1.5 V |
| Power Dissipation | 0.3 W |
| Rise Time | 20000 ns |
| Isolation Voltage | 700 v |
| Forward Current | 40 mA |
| Reverse Breakdown Voltage | 2 V |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 40 mA |
| Fall Time | 20000 ns |
| Fall Time (Max) | 20 µs |
| Fall Time (Max) | 20 µs |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
DESCRIPTION
●Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,JANS, JANTX and JANTXV quality levels.
●Features:
●• Overall current gain...1.5 typical (4N24)
●• Base lead provided for conventional transistor biasing
●• Rugged package
●• High gain, high voltage transistor
●• +1kV electrical isolation
●Applications:
●• Eliminate ground loops
●• Level shifting
●• Line receiver
●• Switching power supplies
●•Motor control
Micropac
12 Pages / 0.42 MByte
Micropac
3 Pages / 0.1 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
