| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | DIP-6 |
| Input Voltage (DC) | 1.18 V |
| Output Voltage | ≤30.0 V |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Forward Voltage | 1.18 V |
| Input Current | 10.0 mA |
| Power Dissipation | 0.25 W |
| Rise Time | 2 µs |
| Isolation Voltage | 7.5 kV |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Forward Current | 60 mA |
| Output Voltage (Max) | 30 V |
| Input Current (Min) | 3 A |
| Reverse Breakdown Voltage | 6 V |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 60 mA |
| Fall Time | 2 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Width | 6.6 mm |
| Size-Height | 3.53 mm |
| Operating Temperature | -55℃ ~ 100℃ |
The 4N25SM is a 6-Pin general purpose Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for digital logic inputs and microprocessor inputs.
● 850V Maximum working insulation voltage
● 6000V High allowable overvoltage
● -40 to +100°C Operating temperature range
● 20% Minimum current transfer ratio at IF=10mA, VCE=10V
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