4N29 Datasheet PDF - Motorola

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.

●This series is designed for use in applications requiring high collector output currents at lower input currents.

●• Higher Sensitivity to Low Input Drive Current

●• Meets or Exceeds All JEDEC Registered Specifications

●• To order devices that are tested and marked per VDE 0884 requirements, the suffix “V” must be included at end of part number. VDE 0884 is a test option.

●Applications

●• Low Power Logic Circuits

●• Interfacing and coupling systems of different potentials and impedances

●• Telecommunications Equipment

●• Portable Electronics

●• Solid State Relays