| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | PDIP-6 |
| Number of Channels | 1 Channel |
| Forward Voltage | 1.2 V |
| Input Current | 80 mA |
| Power Dissipation | 250 mW |
| Isolation Voltage | 4170 Vrms |
| Forward Current | 80 mA |
| Output Voltage (Max) | 30 V |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 80 mA |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Operating Temperature | -40℃ ~ 100℃ |
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
●Features
●---
● |
● High Sensitivity to Low Input Drive Current
● Meets or Exceeds All JEDEC Registered Specifications
● Safety and Regulatory Approvals:
● UL1577, 4,170 VACRMS for 1 Minute
● DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
ON Semiconductor
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