It contains a GaAsP light emitting diode optically coupled to a high gain photodetector IC.
●The excellent performance over temperature results from the inclusion of an integrated emitter-base bypass resistor which shunts photodiode and first stage leakage currents as well as bleeding off excess base drive to ground. External access to the second stage base provides the capability for better noise rejection than a conventional photodarlington detector. An external resistor or capacitor at the base can be added to make a gain-bandwidth or input current threshold adjustment. The base lead can also be used for feedback.
●The high current transfer ratio at very low input currents permits circuit designs in which adequate margin can be allowed for the effects of optical coupling variations.
●It has a 350% minimum CTR at an input current of only 0.5 mA making it ideal for use in low input current applications such as MOS, CMOS and low power logic interfacing. Compatibility with high voltage CMOS logic systems is assured by the 20 V minimum breakdown voltage of the output transistor and by the guaranteed maximum output leakage (IOH) at 18 V.
●Selection for lower input current down to 250 mA is available upon request.
●### Features
● High Current Transfer Ratio 1500% Typical
● Low Input Current Requirement - 0.5 mA
● Performance Guaranteed over 0 degrees C to 70 degrees C Temperature Range
● Internal Base-Emitter Resistor Minimizes Output Leakage
● Gain-Bandwidth Adjustment Pin
● Safety Approval:
●UL Recognized 3750 Vrms for 1 Minute
●CSA Approved
●IEC/EN/DIN EN 60747-5-2
● Options available are:
●060 = IEC/EN/DIN EN 60747-5-2
●300 = Gull Wing Surface Mount Lead Option
●500 = Tape/Reel Package Option (1 K min)
●XXXE = Lead Free Option
