| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220 |
| Drain to Source Voltage (Vds) | 650 V |
DESCRIPTION
●The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
● FEATURES
● RDS(ON)= 2.5Ω@VGS= 10 V
● Ultra Low Gate Charge ( typical 15 nC )
● Low Reverse Transfer CAPACITANCE ( CRSS= typical 8.0 pF )
● Fast Switching Capability
● Avalanche Energy Specified
● Improved dv/dt Capability, high Ruggedness
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