TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 5 Pin |
Case/Package | SC-70-5 |
Output Current | 25 mA |
Number of Circuits | 1 Circuit |
Number of Positions | 5 Position |
Number of Inputs | 2 Input |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Supply Voltage | 2V ~ 5.5V |
Supply Voltage (Max) | 5.5 V |
Supply Voltage (Min) | 2 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.25 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
Operating Temperature | -40℃ ~ 125℃ |
The 74AHC1G00GW is a high-speed Si-gate CMOS device provides a 2-input NAND function. The device has CMOS input switching levels and supply voltage range 2 to 5.5V. The device features symmetrical output impedance and high noise immunity.
● Low power dissipation
● Balanced propagation delays
● ESD protection - HBM JESD22-A114E >2000V, MM JESD22-A115-A >200V, CDM JESD22-C101C >1000V
Nexperia
13 Pages / 0.25 MByte
Nexperia
206 Pages / 0.21 MByte
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72 Pages / 3.63 MByte
Nexperia
1 Pages / 0.13 MByte
NXP
Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays SOT353-1 and SOT753 package options ESD protection: HBM JESD22-A114E: exceeds 2000V MM JESD22-A115-A: exceeds 200V CDM JESD22-C101C: exceeds 1000V Specified from 40 C to +125 C
Nexperia
IC GATE NAND 1CH 2-INP 5-TSSOP
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NAND Gate 1Element 2IN CMOS 5Pin TSOP T/R
Diodes
NAND Gate 1Element 2IN CMOS 5Pin SOT-353 T/R
Nexperia
IC GATE NAND 1CH 2-INP 5-TSOP
NXP
NAND Gate 1Element 2IN CMOS 5Pin TSSOP T/R
Diodes
NAND Gate 1Element 2IN CMOS 5Pin SOT-25 T/R
Nexperia
IC GATE NAND 1CH 2-INP 5-TSOP
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