A1P35S12M3 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Case Package:	ACEPACK-1
Description:	Trans IGBT Module N-CH 1200V 35A 230000mW 15Pin ACEPACK-1 Tray
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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A1P35S12M3 Specifications

TYPE	DESCRIPTION
Number of Pins	15 Pin
Case/Package	ACEPACK-1
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	2154pF @25V
Input Power (Max)	250 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	250000 mW

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