| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 24 Pin |
| Supply Voltage (DC) | 2.40V (min) |
| Case/Package | TSSOP-24 |
| Supply Current | 70.0 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 24 Position |
| Number of Bits | 8 Bit |
| Power Dissipation | 21 W |
| Sample Rate | 200 Msps |
| Power Consumption | 210 mW |
| Number of ADCs | 1 ADC |
| Number of Inputs | 1 Input |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 21 mW |
| Number of Input Channels | 1 Channel |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 2.4 V |
| Input Voltage | 1.6 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 7.8 mm |
| Size-Width | 4.4 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The ADC08200CIMT is a CMOS 8-bit Analogue-to-digital Converter with an on-chip track-and-hold circuit. Optimized for low power, small size and ease of use, this product operates at conversion rates up to 200MSPS while consuming just 210mW per MHz of clock frequency. Raising the PD pin puts the ADC into a Power Down mode where it consumes about 1mW. The unique architecture achieves 7.3 Effective Bits with 50MHz input frequency. The ADC is resistant to latch-up and the outputs are short-circuit proof. The top and bottom of the ADC"s reference ladder are available for connections, enabling a wide range of input possibilities. The digital outputs are TTL/CMOS compatible with a separate output power supply pin to support interfacing with 3V or 2.5V logic. The digital inputs (CLK and PD) are TTL/CMOS compatible. The output data format is straight binary.
● Single-ended input
● Internal sample-and-hold function
● Low voltage operation
● Power-down feature
● ±0.4 LSB Typical DNL
● Power consumption
● 1.05mW/MSPS Typical operation
● 1mW Typical power down
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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