Product Details
●The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.
●The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.
●This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.
●The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.
●Product Highlights
● 1. Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range
● 2. Leakage current <0.25 nA maximum at 85°C
● 3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply
● 4. Automotive temperature range: −40°C to +125°C
● 5. Small 14-lead TSSOP package
●Applications
● Automatic test equipment
● Data acquisition systems
● Battery-powered instruments
● Communication systems
● Sample-and-hold systems
● Remote-powered equipment
● Audio and video signal routing
● Relay replacement
● Avionics
●### Features and Benefits
● 1 pC Charge Injection
● ±2.7 V to ±5.5 V Dual Supply
● +2.7 V to +5.5 V Single Supply
● Automotive Temperature Range:
●–40°C to +125°C
● 100 pA (Maximum @ 25°C) Leakage Currents
●|
● 85 Ω Typical On Resistance
● Rail-to-Rail Operation
● Fast Switching Times
● Typical Power Consumption (<0.1 µW)
● TTL/CMOS Compatible Inputs
● 14-Lead TSSOP Package
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