TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 16 Pin |
Supply Voltage (DC) | 5.50V (max) |
Case/Package (SI) | SOP |
Case/Package | TSSOP-16 |
Number of Outputs | 1 Output |
Contacts Type | DPST-NC |
Supply Current | 1 nA |
Number of Circuits | 1 Circuit |
Number of Channels | 8 Channel |
Number of Positions | 16 Position |
Drain to Source Resistance (on) (Rds) | 5 Ω |
Power Dissipation | 0.432 W |
Bandwidth | 55 MHz |
Number of Inputs | 8 Input |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
3dB Bandwidth | 55 MHz |
Power Dissipation (Max) | 432 mW |
Supply Voltage | 1.8V ~ 5.5V |
Supply Voltage (Max) | 5.5 V |
Supply Voltage (Min) | 1.8 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4.4 mm |
Size-Height | 1.05 mm |
Operating Temperature | -40℃ ~ 125℃ (TA) |
The ADG708BRUZ is a low voltage, CMOS Analogue Multiplexer comprising eight single channels and four differential channels. This switches one of eight inputs (S1 to S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1 and A2. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched off. All channels exhibit break before-make switching action preventing momentary shorting when switching channels. These switches are designed on an enhanced submicron process that provides low power dissipation yet gives high switching speed, very low on resistance and leakage currents. On resistance is in the region of a few ohms and is closely matched between switches and very flat over the full signal range. These parts can operate equally well as either multiplexer or de-multiplexer and have an input signal range that extends to the supplies.
● 1.8 to 5.5V Single supply
● ±2.5V Dual supply
● 3R Resistance
● 0.75R Resistance flatness
● 100pA Leakage currents
● 14ns Switching times
● Low power consumption
●Product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD.
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