| TYPE | DESCRIPTION |
|---|
| Frequency | 520 MHz |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89 |
| Number of Positions | 3 Position |
| Power Dissipation | 28 W |
| Output Power | 4.9 W |
| Gain | 20.9 dB |
| Test Current | 100 mA |
| Input Capacitance (Ciss) | 57.6pF @7.5V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 28000 mW |
| Voltage Rating | 30 V |
| Supply Voltage | 7.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 150℃ |
● Characterized for Operation from 136 to 941 MHz
● Unmatched Input and Output Allowing Wide Frequency Range Utilization
● Integrated ESD Protection
● Integrated Stability Enhancements
● Wideband — Full Power Across the Band
● Exceptional Thermal Performance
● Extreme Ruggedness
● RoHS Compliant
● In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.
NXP
RF Power Transistor, 0.136 to 0.941GHz, 4W, Typ.Gain in dB is 20.9 @ 520MHz, 7.5V, LDMOS, SOT-89A
Freescale
Wideband RF Power LDMOS Transistor, 136-941MHz, 4W, 7.5V
NXP
Wideband RF Power LDMOS Transistor, 136-941MHz, 4W, 7.5V
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