TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | TO-252-3 |
Power Rating | 52 W |
Power Dissipation | 52000 mW |
Breakdown Voltage (Collector to Emitter) | 650 V |
Reverse recovery time | 170 ns |
Input Power (Max) | 52 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 52000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 650V 10A 52W Surface Mount TO-252, (D-Pak)
Alpha & Omega Semiconductor
1 Pages / 0.15 MByte
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 10A 69000mW 3Pin(2+Tab) DPAK T/R
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 10A 52000mW
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