| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 83.3 W |
| Power Dissipation | 167000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 196 ns |
| Input Power (Max) | 167 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 167000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This AOT15B60D IGBT transistor from Alpha & Omega Semiconductor will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 167000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
Alpha & Omega Semiconductor
9 Pages / 0.65 MByte
Alpha & Omega Semiconductor
5 Pages / 3.49 MByte
Alpha & Omega Semiconductor
1 Pages / 0.09 MByte
Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 30A 167000mW 3Pin(3+Tab) TO-220 Tube
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