TYPE | DESCRIPTION |
---|
Mounting Style | Screw |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 1.00 kV |
Current Rating | 18.0 A |
Case/Package | SOT-227-4 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 600 mΩ |
Polarity | N-CH |
Power Dissipation | 520 W |
Threshold Voltage | 2 V |
Input Capacitance | 6.10 nF |
Drain to Source Voltage (Vds) | 1000 V |
Breakdown Voltage (Drain to Source) | 1 kV |
Continuous Drain Current (Ids) | 18.0 A |
Rise Time | 14 ns |
Input Capacitance (Ciss) | 7200pF @25V(Vds) |
Fall Time | 14 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 520W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Length | 38.2 mm |
Size-Width | 25.4 mm |
Size-Height | 9.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Microsemi
4 Pages / 0.07 MByte
Microsemi
44 Pages / 2.7 MByte
Microsemi
40 Pages / 4.07 MByte
Microchip
MOSFET N-CH 1000V 18A SOT-227
Advanced Power Technology
POWER MOS IV 1000V 18A 0.6Ω
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