| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 37.0 A |
| Case/Package | SOT-227-4 |
| Polarity | N-CH |
| Power Dissipation | 694 W |
| Input Capacitance | 9.75 nF |
| Gate Charge | 395 nC |
| Drain to Source Voltage (Vds) | 1000 V |
| Continuous Drain Current (Ids) | 37.0 A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 9750pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 694W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Create an effective common drain amplifier using this APT10021JLL power MOSFET from Microsemi. Its maximum power dissipation is 694000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Microsemi
6 Pages / 0.14 MByte
Microsemi
44 Pages / 2.7 MByte
Microsemi
40 Pages / 4.07 MByte
Microchip
MOSFET N-CH 1000V 37A SOT-227
Microchip
MOSFET N-CH 1000V 37A ISOTOP
Advanced Power Technology
(APT9021DFN / APT10021DFN) N-Channel Enhancement Mode High Voltage Power MOSFET
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