| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227 |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 7.85nF @25V |
| Input Power (Max) | 570 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this APT100GT120JRDQ4 IGBT transistor from Microsemi. It has a maximum collector emitter voltage of ±20 V. Its maximum power dissipation is 0.6 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single dual emitter configuration.
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